BCX42(2007) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BCX42
(Rev.:2007)

PNP Silicon AF and Switching Transistor

Infineon Technologies 

BCX42

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO 125

-

-

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO 125

-

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO 5

-

-

Collector-base cutoff current

VCB = 100 V, IE = 0

VCB = 100 V, IE = 0 , TA = 150 °C

I CBO

-

-

0.1

-

-

20

Collector-emitter cutoff current

VCE = 100 V, TA = 85 °C

I CEO

-

-

10

VCE = 100 V, TA = 125 °C

-

-

75

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain1)

IC = 100 µA, VCE = 1 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

I EBO

hFE

-

- 100

25

-

-

63

-

-

40

-

-

Collector-emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

VCEsat

-

-

0.9

Base emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

VBEsat

-

-

1.4

Unit

V

µA

nA

-

V

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

fT

-

150

- MHz

Ccb

-

12

- pF

1Pulse test: t < 300µs; D < 2%

2

2007-04-27

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