BTS129 View Datasheet(PDF) - Siemens AG

Part Name

Description

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BTS129

N-Channel TEMPFET®

Siemens AG 

Typ. gate-source leakage current

IGSS = f (TC)

Parameter: VGS = 20 V, VDS = 0

BTS 129

Typ. capacitances C = f (VDS)

Parameter: VGS = 0, f = 1 MHz

Forward characteristics of reverse diode

IF = f (VSD)

Parameter: Tj, tp = 80 µs

Transient thermal impedance ZthJC = f (tp)

Parameter: D = tp/T

Semiconductor Group

7

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