MMBTA13 View Datasheet(PDF) - Weitron Technology

Part Name

Description

View to exact match

MMBTA13

NPN Transistors Darlington Amplifier

Weitron Technology 

MMBTA13

MMBTA14

1.6

TJ = 25 C

1.4

VBE(sat) @ I C/IB = 1000

1.2

VBE(on)@ V CE = 5.0 V

1.0

0.8

VCE(sat)@ I C/IB = 1000

0.6

5.0 7.0

10

20 30 50 70 100 200 300

IC, COLLECTOR CURRENT (mA)

F IG .10. " On" Voltages

- 1.0

*APPLIES FOR IC/IB 3 hFE/3.0

- 2.0 *RqVC FOR VCE(sat)

- 3.0

- 4.0

VB FOR VBE

- 5.0

25 C TO 125 C

- 55 C TO 25 C

25 C TO 125 C

- 55 C TO 25 C

- 6.0

500

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

F IG .11 Temperature C oeffic ients

1.0

0.7

0.5 D = 0.5

0.2

0.3

0.2

0.1

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.05

0.5

SINGLE PULSE

SINGLE PULSE

ZqJC(t) = r(t)wRqJC T J(pk)- T C = P(pk)ZqJC(t)

ZqJA(t)= r(t)wRqJA T J(pk)- T A = P(pk)ZqJA(t)

1.0 2.0

5.0 10

20

50

t, TIME (ms)

100 200

FIG.12 Thermal R es pons e

500 1.0 k 2.0 k 5.0 k 10 k

1.0 k

700

500

300

TA = 25 C

200

1.0 ms

TC = 25 C 100ms

1.0 s

FIGURE A

tP

PP

PP

100

70

50

30

20

10

0.4

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.6 1.0 2.0

4.0 6.0 10

20

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

F IG .13 A c tive R egion S afe Operating A rea

t1

1/f

40

DUTY CYCLE

t1 f

t1

tP

PEAK PULSE POWER = PP

Des ign Note: Us e of Trans ient T hermal R es is tanc e Data

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