BC856A(2008) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BC856A Datasheet PDF : 14 Pages
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BC856...-BC860...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BC856...
65
-
-
IC = 10 mA, IB = 0 , BC857..., BC860...
45
-
-
IC = 10 mA, IB = 0 , BC858..., BC859...
30
-
-
Unit
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC856...
IC = 10 µA, IE = 0 , BC857..., BC860...
IC = 10 µA, IE = 0 , BC858..., BC859...
V(BR)CBO
80
-
-
50
-
-
30
-
-
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain1)
IC = 10 µA, VCE = 5 V, hFE-grp.A
IC = 10 µA, VCE = 5 V, hFE-grp.B
IC = 10 µA, VCE = 5 V, hFE-grp.C
IC = 2 mA, VCE = 5 V, hFE-grp.A
IC = 2 mA, VCE = 5 V, hFE-grp.B
IC = 2 mA, VCE = 5 V, hFE-grp.C
V(BR)EBO 5
-
-
I CBO
hFE
µA
-
- 0.015
-
-
5
-
- 140 -
- 250 -
- 480 -
125 180 250
220 290 475
420 520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
-
75 300
- 250 650
VBEsat
-
700
-
-
850
-
VBE(ON)
600 650 750
-
- 820
1Pulse test: t < 300µs; D < 2%
4
2008-04-29
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