BDX65 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BDX65 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX65/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX65
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX65A
BDX65B
IC= 100mA ;IB=0
BDX65C
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 20mA
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A ; VCE= 3V
IF= 5A
VCE= 1/2VCEOmax; IB= 0
VCB= VCEOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TJ= 200℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
hFE-2
DC Current Gain
IC= 5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 12A ; VCE= 3V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= 5A; IB1= -IB2= 20mA
MIN TYP. MAX UNIT
60
80
V
100
120
2
V
2.5
V
1.2
V
0.2 mA
0.4
3
mA
5
mA
3300
1000
3700
200
pF
1
μs
6
μs
isc Website：www.iscsemi.cn
2
Share Link: 