CPV364M4KPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

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CPV364M4KPBF

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

CPV364M4KPbF

160

140

120

100

80

DC

60

40 Square wave (D=0.50)

80% rated Vr applied

20 see note (2)

0

0 5 10 15 20 25 30

TC, Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

4.0

VGE = 15V

80 us PULSE WIDTH

3.0

IC= 26A

2.0

IC= 13A

IC= 6.5A

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

10

1 D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

Notes:

1. Duty factor D = t 1 / t 2

t1

t2

0.01

0.00001

0.0001

0.001

0.01

2. Peak TJ = PDM x Z thJC + TC

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

4

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