E13007G View Datasheet(PDF) - ON Semiconductor
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Description
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E13007G
ON Semiconductor
E13007G Datasheet PDF : 10 Pages
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MJE13007G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
−
−
Vdc
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
ICES
IEBO
mAdc
−
−
0.1
−
−
1.0
−
−
100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
Clamped Inductive SOA with Base Reverse Biased
−
See Figure 6
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
hFE
−
8.0
−
40
5.0
−
30
VCE(sat)
−
−
−
−
Vdc
−
1.0
−
2.0
−
3.0
−
3.0
Base−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
VBE(sat)
−
−
−
Vdc
−
1.2
−
1.6
−
1.5
fT
4.0
14
−
MHz
Cob
−
80
−
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25 ms,
Duty Cycle ≤ 1.0%)
Inductive Load, Clamped (Table 1)
td
−
0.025
0.1
ms
tr
−
0.5
1.5
ts
−
1.8
3.0
tf
−
0.23
0.7
Voltage Storage Time
Crossover Time
Fall Time
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200 mH
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tsv
−
1.2
2.0
ms
−
1.6
3.0
tc
−
0.15
0.30
ms
−
0.21
0.50
tfi
−
0.04
0.12
ms
−
0.10
0.20
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