2N3055 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
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2N3055 Datasheet PDF : 3 Pages
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2N3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
BVCER
ICEO
ICEX
Collector-Emitter Sustaining Voltage
(*)
Collector-Emitter Breakdown
Voltage (*)
IC=200 mA, IB=0
IC=200 mA, RBE=100Ω
Collector-Emitter Current
CVE=30 V, IB=0
Collector Cutoff Current
VCE=100 V, VEB(off)=1.5 V
IEBO
Emitter Cutoff Current
VBE=7.0 V, IC=0
hFE
DC Current Gain
IC=4.0 A, IB=4.0 Adc
VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 A, IB=0.4 2Adc
VBE
Base-Emitter Voltage
hfe
Small Signal Current Gain
fαe
Small Signal Current Gain Cutoff
Frequency
VCER(SUS) Collector-Emitter Sustaining Voltage
Is/b
Second Breakdown Collector
Current
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
IC=4.0 A, VCE=4.0 V
VCE=4.0 V, IC=1.0 A
f=1.0 kHz
VCE=4.0 V, IC=1.0 A
f=1.0 kHz
IC=0.2 A, IB=0 A
RBE= 100Ω
t=1 S (non repetitive)
Min Typ Max Unit
60
-
-
V
70
-
-
V
-
-
0.7 MA
-
-
5.0 mA
-
-
5.0 mA
20
-
70
-
-
1.1 V
-
1.8
-
V
15
- 120 -
10
-
- kHz
60
-
-
V
1.95 -
-
A
31/10/2012
COMSET SEMICONDUCTORS
2|3
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