2SB507 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2SB507 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB507
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD313
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
固I电NC半HANGE SEMICONDUCTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-5
-3
UNIT
V
V
V
A
ICM
Collector current-Peak
-6
A
IB
Base current
-1
A
PC
Collector dissipation
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
MAX
4.16
UNIT
℃/W
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