BUW11AF View Datasheet(PDF) - Philips Electronics

Part Name

Description

View to exact match

BUW11AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW11F; BUW11AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT199 package.

ook, halfpage

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb mounting base;

electrically isolated

handbook, halfpage

2

1

MBB008

3

123

Front view

MSB012

Fig.1 Simplified outline (SOT199) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

collector-emitter peak voltage

BUW11F

BUW11AF

VCEO

collector-emitter voltage

BUW11F

BUW11AF

VCEsat

ICsat

collector-emitter saturation voltage

collector saturation current

BUW11F

BUW11AF

IC

collector current (DC)

ICM

collector current (peak value)

Ptot

total power dissipation

tf

fall time

CONDITIONS

VBE = 0

open base

MAX.

UNIT

850

V

1 000

V

400

V

450

V

1.5

V

3

A

2.5

A

see Figs 2 and 4

5

A

tp < 20 ms; see Fig.2

10

A

Th ≤ 25 °C; see Fig.3

32

W

resistive load; see Figs 8 and 9 0.8

µs

1997 Aug 14

2

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