STTH1004 View Datasheet(PDF) - STMicroelectronics
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STTH1004 Datasheet PDF : 7 Pages
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STTH1004
Characteristics
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt (typical values)
Zth(j-c)/Rth(j-c)
1.0
0.9
Single pulse
TO-220FPAC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tP(s)
1.E-01
1.E+00
1.E+01
IRM(A)
14
13
IF=IF(AV)
12
VR=200V
11
Tj=125°C
10
9
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
trr(ns)
80
70
60
50
40
30
20
10
0
0
50
IF=IF(AV)
VR=200V
Tj=125°C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
300
250
IF=IF(AV)
VR=200V
Tj=125°C
200
150
100
50
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery softness factor
versus dIF/dt (typical values)
0.8 S factor
IF < 2 x IF(AV)
0.7
VR=200V
Tj=125°C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Relative variations of dynamic
parameters versus junction
temperature
Tj(°C)
50
75
100
125
3/7
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