N-Channel 50V MOSFET
Features:
y Surface-mounted package
y High Density Cell Design
y Low Threshold Voltage
y Halogen free
Application
y DC-DC
y Portable appliance
y Power management
BSS138
BVDSS= 50V ,
RDS(ON)< 10Ω@VGS= 2.75V
RDS(ON)< 3.5Ω@VGS= 5.0V
ID= 200mA
Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
Continuous Drain Current
Ta=25℃
Pulsed Drain Current(tp≦10us)
Power Dissipation
Ta=25℃
Operating Junction and Storage Temperature Range
VGS
ID
IDM
PD
TJ, Tstg
±20
V
200
mA
800
mA
225
mW
-55 to150
℃
Thermal Characteristics
Symbol
RθJA
Junction-to-Ambient
Characteristic
Max.
556
Units
℃/W
Rev.01, JAN. 2013
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