SIA811ADJ-T1-GE3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
SIA811ADJ-T1-GE3 Datasheet PDF : 12 Pages
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www.vishay.com
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
8
SiA811ADJ
Vishay Siliconix
6
6
Package Limited
4
4
2
2
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating a
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S-82482-Rev. A, 13-Oct-08
6
Document Number: 68955
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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