BSB008NE2LX View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BSB008NE2LX Datasheet PDF : 15 Pages
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OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current1)
Avalanche current, single pulse2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-20
-
-
-40
Values
Typ. Max.
-
180
-
165
-
46
-
400
-
40
-
600
-
20
-
89
-
2.8
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
A VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=45K/W
A TC=25°C
A TC=25°C
mJ ID=40A,RGS=25Ω
V-
W
TC=25°C
TA=25°C,RthJA=45K/W
°C
IEC climatic category;
DIN IEC 68-1: 40/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area3)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
1.0 -
K/W -
-
-
1.4 K/W -
-
-
45 K/W -
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.2.0,2015-01-20
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