BSB008NE2LX View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BSB008NE2LX

OptiMOS™ Power-MOSFET, 25V

Infineon Technologies 

OptiMOSTMPower-MOSFET,25V

BSB008NE2LX

1Description

Features

•Optimizedfore-fuseandOR-ingapplication

•UltralowRdsoninCanPAK-MXfootprint

•Lowprofile(<0.7mm)

•100%avalanchetested

•100%RgTested

•Double-sidedcooling

•CompatiblewithDirectFET®packageMXfootprintandoutline1)

•QualifiedaccordingtoJEDEC2)fortargetapplications

CanPAKMX-size

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

25

V

RDS(on),max

0.8

mΩ

ID

180

A

Qoss

74

nC

Qg(0V..10V)

258

nC

Gate

Source

Type/OrderingCode

BSB008NE2LX

Package

MG-WDSON-2

Marking

04E2

RelatedLinks

-

1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered

trademark of International Rectifier Corporation.

2) J-STD20 and JESD22

Final Data Sheet

2

Rev.2.0,2015-01-20

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