NTMFS4935NT3G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

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NTMFS4935NT3G

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 93 A

ON Semiconductor 

NTMFS4935N

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol Value Unit

Single Pulse Drain−to−Source Avalanche

EAS

110

mJ

Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,

IL = 47 Apk, L = 0.1 mH, RG = 25 W

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

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