datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

R5F21132DFP(2010) View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
R5F21132DFP
(Rev.:2010)
Renesas
Renesas Electronics Renesas
R5F21132DFP Datasheet PDF : 33 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
R8C/13 Group
5. Electrical Characteristics
Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Symbol
Parameter
Measuring condition
Standard
Min. Typ.
Program/Erase endurance(2)
10000(3)
Byte program time(program/erase endurance
1000 times)
50
Byte program time(program/erase endurance
>1000 times)
65
Block erase time(program/erase endurance
1000 times)
0.2
Block erase time(program/erase endurance
>1000 times)
0.3
td(SR-ES) Time delay from Suspend Request until Erase Suspend
Erase Suspend Request Interval
10
Program, Erase Voltage
2.7
Read Voltage
2.7
Program/Erase Temperature
-20(-40)(8)
Data hold time(9)
Ambient temperature =
55 °C
20
Max
400
9
8
5.5
5.5
85
Unit
times
µs
µs
s
s
ms
ms
V
V
°C
year
NOTES:
1. Referenced to VCC=AVcc=2.7 to 5.5V at Topr = -20°C to 85°C / -40°C to 85°C unless otherwise specified.
2. Definition of Program/Erase
The endurance of Program/Erase shows a time for each block.
If the program/erase number is n(n = 1000, 10000), ntimes erase can be performed for each block.
For example, if performing one-byte write to the distinct addresses on Block A of 2K-byte block 2048 times and then
erasing that block, the number of Program/Erase cycles is one time.
However, performing multiple writes to the same address before an erase operation is prohibited (overwriting
prohibited).
3. Numbers of Program/Erase cycles for which all electrical characteristics is guaranteed.
4. Table 5.5 applies for Block A or B when the Program/Erase cycles are more than 1000. The byte program time up to
1000 cycles are the same as that of the program area (see Table 5.4).
5. To reduce the number of Program/Erase cycles, a block erase should ideally be performed after writing in series as
many distinct addresses (only one time each) as possible. If programming a set of 16 bytes, write up to 128 sets and
then erase them one time. This will result in ideally reducing the number of Program/Erase cycles. Additionally,
averaging the number of Program/Erase cycles for Block A and B will be more effective. It is important to track the total
number of block erases and restrict the number.
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase
command at least three times until the erase error disappears.
7. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representa-
tive.
8. -40 °C for D version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Erase-suspend request
(interrupt request)
FMR46
td(SR-ES)
Figure 5.2 Time delay from Suspend Request until Erase Suspend
Rev.1.20 Jan 27, 2006 page 17 of 27
REJ03B0069-0120

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]