STB120NF10 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STB120NF10

N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP

STMicroelectronics 

STB/F/PW120NF10

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS(4) Single pulse avalanche energy

TJ Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed.

2. Pulse width limited by safe operating area.

3. ISD ≤ 120 A, di/dt ≤ 300 A/µs, VDD = 80%V(BR)DSS

4. Starting Tj = 25 °C, ID = 60 A, VDD = 50 V

Value

Unit

TO-220, TO-247,

D²PAK

TO-220FP

100

± 20

110

77

440

312

2.08

10

550

41 (1)

29(1)

164 (1)

45

0.30

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

TO-220 TO-247 D²PAK TO-220FP

Rthj-case Thermal resistance junction-case max

Rthj-amb

Thermal resistance junction-ambient

max

Rthj-pcb(1) Thermal resistance junction-pcb max

TL

Maximum lead temperature for soldering

purpose

0.48

62.5

35

300

3.33 °C/W

62.5 °C/W

°C/W

300

°C

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Doc ID 9522 Rev 7

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