BSZ042N06NS View Datasheet(PDF) - Infineon Technologies
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BSZ042N06NS Datasheet PDF : 12 Pages
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OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram9:Drain-sourceon-stateresistance
8
Diagram10:Typ.gatethresholdvoltage
5
7
6
5
max
4
typ
3
4
3
360 µA
36 µA
2
2
1
1
0
-60
-20
20
60
100
140
180
Tj[°C]
0
-60
-20
20
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
104
Ciss
103
Coss
102
Diagram12:Forwardcharacteristicsofreversediode
103
25 °C
150 °C
102
101
Crss
101
0
20
40
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
100
60
0.0
0.5
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
9
Rev.2.3,2014-11-10
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