2SA1298O View Datasheet(PDF) - Toshiba
Part Name
Description
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2SA1298O Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1298
Low Frequency Power Amplifier Application
Power Switching Applications
2SA1298
Unit: mm
• High DC current gain: hFE = 100 to 320
• Low saturation voltage: VCE (sat) = −0.4 V (max)
(IC = −500 mA, IB = −20 mA)
• Suitable for driver stage of small motor
• Complementary to 2SC3265
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−30
V
−25
V
−5
V
−800
mA
−160
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-10
1
2014-03-01
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