SKW25N120(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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SKW25N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

25mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

20mJ

15mJ

10mJ

5mJ

Eon*

Eoff

0mJ

0A

20A

40A

60A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω,

dynamic test circuit in Fig.E )

8mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

6mJ

4mJ

2mJ

Eon*

Eoff

0mJ

-50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 25A, RG = 2 2 Ω,

dynamic test circuit in Fig.E )

10mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

8mJ

6mJ

4mJ

Eon*

Eoff

2mJ

0mJ

0Ω 10Ω 20Ω 30Ω 40Ω 50Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 25A,

dynamic test circuit in Fig.E )

D=0.5

10-1K/W 0.2

0.1

0.05

10-2K/W 0.02

0.01

R,(K/W)

0.07417

0.20899

0.08065

0.03681

R1

τ, (s)

0.4990

0.08994

0.00330

0.00038

R2

single pulseC1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

Power Semiconductors

7

Rev. 2_2 Sep 08

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