SKW25N120(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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SKW25N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

80A

70A

60A

VGE=17V

50A

15V

13V

40A

11V

9V

30A

7V

20A

10A

0A

0V 1V 2V 3V 4V 5V 6V 7V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(Tj = 25°C)

80A

70A

60A

50A

VGE=17V

15V

13V

40A

11V

9V

30A

7V

20A

10A

0A

0V 1V 2V 3V 4V 5V 6V 7V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristics

(Tj = 150°C)

80A

70A

60A

50A

Tj=+150°C

40A

Tj=+25°C

30A Tj=-40°C

20A

10A

0A

3V 4V 5V 6V 7V 8V 9V 10V 11V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristics

(VCE = 20V)

6V

5V

IC=50A

4V

IC=25A

3V

IC=12.5A

2V

1V

0V

-50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(VGE = 15V)

Power Semiconductors

5

Rev. 2_2 Sep 08

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