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Part Name
Description
BC817SU(2008) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BC817SU
(Rev.:2008)
NPN Silicon AF Transistor
Infineon Technologies
BC817SU Datasheet PDF : 6 Pages
1
2
3
4
5
6
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 1 V
10
3
BC817SU
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
0.4
V
10
2
125 °C
85 °C
25 °C
- 40 °C
150 °C
0.2
25 °C
- 50 °C
0.1
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
A
10
0
I
c
Base-emitter saturation voltage
I
C
= (
V
BEsat
),
h
FE
= 10
0
10
-4
10
-3
10
-2
10
-1
A
10
0
I
c
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 25 V
1.5
V
1.2
1.1
150 °C
1
25 °C
0.9
- 50 °C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
-4
10
-3
10
-2
10
5 BC 817/818
nA
Ι
CBO
10
4
10
3
10
2
EHP00221
max
typ
10
-1
A
10
0
I
c
10
1
10
0
0
50
100 ˚C 150
T
A
3
2008-10-20
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