IGB10N60T View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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IGB10N60T

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Infineon Technologies 

IGB10N60T

TRENCHSTOP™ Series

p

15V

10V

120V

480V

5V

0 V0 n C

20nC

40nC

60nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=10 A)

1nF

C iss

100pF

C oss

C rss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

150A

125A

100A

75A

50A

25A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

IFAG IPC TD VLS

8

Rev. 2.1 30.04.2015

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