BDX63 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

View to exact match

BDX63

NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

Semelab - > TT Electronics plc  

MECHANICAL DATA

Dimensions in mm

26.6 max.

4.2

9.0 max.

2.5

BDX63

BDX63A

BDX63B

BDX63C

NPN EPITAXIAL BASE

DARLINGTON POWER

TRANSISTOR

B

E

NPN epitaxial base transistors in

monolithic Darlington circuit for

audio output stages and general

amplifier and switching

applications.

10.9

12.8

TO3 Package.

Case connected to collector.

PNP complements are:

BDX62, BDX62A, BDX62B, BDX62C.

ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)

BDX BDX BDX BDX

63 63A 63B 63C

VCEO

Collector - emitter voltage (open base)

60 80 100 120 V

VCBO

Collector - base voltage (open emitter)

80 100 120 140 V

VEBO

Emitter - base voltage (open collector)

5 5 5 5V

IC

Collector current

8

A

ICM

Collector current (peak)

12

A

IB

Base current

150

mA

Ptot

Total power dissipation at Tcase= 25°C

90

W

Tj

Maximum junction temperature

200

°C

Tstj

Storage junction temperature

-65 to 200

°C

Rth j-mb

Thermal resistance, junction to mounting base.

1.94

°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/93

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