BDX63 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

View to exact match

BDX63

NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

Semelab - > TT Electronics plc  

BDX63

BDX63A

BDX63B

BDX63C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated)

Parameter

Test Conditions

ICBO

ICEO

IEBO

hFE

VBE

Collector cut-off current

Collector cut-off current

Emitter cut-off current

D.C. current gain (note 1)

Base - emitter voltage (note 1)

IE = 0, VCB = VCEOmax

IE = 0, VCB = ½VCBOmax, Tj = 200°C

IB = 0, VCE = ½VCEOmax

IC = 0, VEB = 5V

IC = 0.5A, VCE = 3V

IC = 3A, VCE = 3V

IC = 8A, VCE = 3V

IC = 3A, VCE = 3V

VCEsat

Collector - emitter saturation

voltage

IC = 3A, IB = 12mA

Cc

fhfe

E(BR)

Collector capacitance

Cut-off frequency

Turn-off breakdown energy

with inductive load

IE = Ie = 0, VCB = 10V

IC = 3A, VCE = 3V

–IBoff = 0, ICon = 4.5 A

tp = 1ms, T = 100ms

hFE1/hFE2

D.C. current gain ratio of

complementary matched pairs

IC = 3A, VCE = 3V

ïhfeï

VF

Small signal current gain

Diode, forward voltage

IC = 3A, VCE = 3V, f = 1MHz

IF = 3A

Min.

1000

50

Note 1: Measured under pulse conditions , tp < 300ms, d < 2%

Typ.

2500

2600

100

100

100

1.2

Max.

0.2

2

0.5

5

Unit.

mA

mA

mA

2.5

V

2

V

pF

kHz

mJ

2.5

V

R1 typ. 8KW

R2 typ. 100W

Circuit diagram.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/93

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