APT30GT60BRDLG View Datasheet(PDF) - Microsemi Corporation
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Description
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APT30GT60BRDLG Datasheet PDF : 9 Pages
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TYPICAL PERFORMANCE CURVES
3,000
Cies
1,000
500
100
50
Coes
Cres
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT30GT60BRDL(G)
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
D = 0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp. (°C)
RC MODEL
0.0838
0.00245
Power
(watts)
0.207
0.00548
Case temperature. (°C)
0.209
0.165
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
50
F
max
=
min
(fmax,
f
max2)
10
0.05
fmax1 = t d(on) + tr + td(off) + tf
5
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
1 RG = 10Ω
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
5 15 25 35 45 55 65
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
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