TIPP116 View Datasheet(PDF) - Power Innovations Ltd

Part Name

Description

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TIPP116

PNP SILICON POWER DARLINGTONS

Power Innovations Ltd 

TIPP115, TIPP116, TIPP117

PNP SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Collector-emitter

V(BR)CEO breakdown voltage

ICEO

Collector-emitter

cut-off current

ICBO

Collector-base

cut-off current

IEBO

hFE

VCE(sat)

VBE

VEC

Emitter cut-off

current

Forward current

transfer ratio

Collector-emitter

saturation voltage

Base-emitter

voltage

Parallel diode

forward voltage

IC = -10 mA

(see Note 4)

VCE = -30 V

VCE = -40 V

VCE = -50 V

VCE = -60 V

VCE = -80 V

VCE = -100 V

VEB = -5 V

VCE = -4 V

VCE = -4 V

IB = -8 mA

VCE = -4 V

IE = -4 A

IB = 0

VBE = 0

VBE = 0

VBE = 0

IB = 0

IB = 0

IB = 0

IC = 0

IC = -1 A

IC = -2 A

IC = -2 A

IC = -2 A

IB = 0

TIPP115

TIPP116

TIPP117

TIPP115

TIPP116

TIPP117

TIPP115

TIPP116

TIPP117

-60

-80

-100

-2

-2

-2

-1

-1

-1

-2

(see Notes 4 and 5)

1000

500

(see Notes 4 and 5)

-2.5

(see Notes 4 and 5)

-2.8

(see Notes 4 and 5)

-3.5

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

PRODUCT INFORMATION

2

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