datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

CDP1853/3 View Datasheet(PDF) - Intersil

Part Name
Description
View to exact match
CDP1853/3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
CDP1853/3, CDP1853C/3
Static Electrical Specifications
PARAMETER
SYMBOL
CONDITIONS
VO
VIN
VDD
(V)
(V)
(V)
LIMITS
-55oC, +25oC
+125oC
MIN
MAX
MIN
MAX
UNITS
Quiescent Device
ISS
-
0, 5
5
-50
-
-100
-
µA
Current
(Note 1)
-
0, 10
10
-500
-
-1000
-
µA
Output Low Drive
(Sink) Current
IOL
0.4
-
5
2.3
-
1.6
-
mA
0.5
-
10
3.7
-
2.6
-
mA
Output High Drive
(Source) Current
IOH
4.6
-
5
-
-1.7
-
-1.2
mA
9.5
-
10
-
-3.7
-
-2.6
mA
Output Voltage
Low-Level
VOL
-
0, 5
5
-
0.1
-
0.2
V
(Note 2)
-
0, 10
10
-
0.1
-
0.2
V
Output Voltage
High-Level
VOH
-
0, 5
5
4.9
-
4.8
-
V
(Note 2)
-
0, 10
10
9.9
-
9.8
-
V
Input Low Voltage
VIL
0.8, 4.2
-
5
-
1.5
-
1.5
V
1, 9
-
10
-
3
-
3
V
Input High Voltage
VIH
0.8, 4.2
-
5
3.5
-
3.5
-
V
1, 9
-
10
7
-
7
-
V
Input Leakage Low
IIL
-
0
5
-1
-
-5
-
µA
-
0
10
-1
-
-5
-
µA
Input Leakage High
IIH
-
5
5
-
1
-
5
µA
-
10
10
-
1
-
5
µA
Input Capacitance
CIN (Note 2)
-
-
-
-
10
-
10
pF
Output Capacitance
COUT (Note 2)
-
-
-
-
15
-
15
pF
NOTES:
1. The CDP1853C meets all 5V static electrical characteristics of the CDP1853 except quiescent device current for which the limits are:
ISS = -500µA at -55oC and +25oC and ISS = -1000µA at +125oC.
2. Guaranteed but not tested.
Dynamic Electrical Specifications See Figure 2, CL = 100pF, tR, tF = 15ns
LIMITS
PARAMETER
SYMBOL
VDD
(V)
-55oC, +25oC
MIN
MAX
+125oC
MIN
MAX
Propagation Delay Time:
Chip Enable (CE) to Output High
tEOH
5
10
-
175
-
275
-
90
-
150
UNITS
ns
ns
4-42

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]