2N6338 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
View to exact match
2N6338 Datasheet PDF : 5 Pages
| |||
2N6338, 2N6341
+ 11 V
0
10 μs
- 9.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RB
10 OHMS
VCC
+ 80 V
RC
8.0 OHMS
SCOPE
1N4933
- 5.0 V
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
Figure 2. Switching Time Test Circuit
1000
700
500
VCC = 80 V
IC/IB = 10
300
td @ VBE(off) = 6.0 V
TJ = 25°C
200
100
tr
70
50
30
20
10
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
20 30
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
θJC = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
Figure 4. Thermal Response
20 30 50 100 200 300 500 1000
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
2.0
dc
TJ = 200°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED VCEO
3.0 5.0 7.0 10
20 30
200 μs
1.0 ms
5.0 ms
2N6338
2N6341
50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
3
Share Link: 