2N6338(2001) View Datasheet(PDF) - ON Semiconductor
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2N6338 Datasheet PDF : 4 Pages
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2N6338 2N6341
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
θJC = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
Figure 4. Thermal Response
20 30 50 100 200 300 500 1000
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
2.0
dc
TJ = 200°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED VCEO
3.0 5.0 7.0 10
20 30
200 µs
1.0 ms
5.0 ms
2N6338
2N6341
50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
3.0
ts
2.0
1.0
0.7
0.5
0.3
0.2
tf
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.1
0.07
0.05
0.3
0.5 0.7 1.0
2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
20 30
5000
3000
2000
Cib
TJ = 25°C
1000
700
500
300
200
Cob
100
70
50
0.1
0.2 0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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