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SRK2000DTR(2012) View Datasheet(PDF) - STMicroelectronics

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SRK2000DTR Datasheet PDF : 17 Pages
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SRK2000
Electrical characteristics
Table 5. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
IEN
Bias current
Turn-off threshold selection
VEN = VEN_On
1 µA
VEN-Th
IEN
Selection threshold
Pull-down current
Gate drivers
VCC = VCCOn
0.32 0.36 0.40 V
VEN = VEN_Th, VCC = VCCOn 7
10 13 µA
IGDsource = 5 mA
11.75 11.9
VGDH Output high voltage
V
IGDsource = 5 mA, Vcc = 5 V 4.75 4.9
IGDsink = 200 mA
0.2
VGDL Output low voltage
V
IGDsink = 200 mA, Vcc = 5 V
0.2
Isourcepk Output source peak current
-1
A
Isinkpk Output sink peak current
3.5
A
tf
Fall time
18
ns
tr
Rise time
40
ns
VGDclamp Output clamp voltage
IGDsource = 5 mA; Vcc = 20 V 12
13
15
V
VGDL_UVLO UVLO saturation
Vcc = 0 to VCCon
Isink = 5 mA
1 1.3 V
1. Parameters tracking each other.
2. For Vcc>30 V IDVS1,2_b may be greater than 1 µA because of the possible current contribution of the
internal clamp Zener (few tens of µA).
Doc ID 17811 Rev 2
7/17

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