Typical Characteristics (Continued)
RMWP23001, 23 GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd = 4V, Idq = 400mA and 435mA
26
26
P1dB (mA)
25
-400
25
-435
24
24
23
23
22
22
21
21
-435
20
20
19
19
-400
Gain (mA)
18
18
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
RMWP23001, Typical Performance Variation with Temperature
Vd = 4V, Idq = 400mA, Chip Bonded into 50Ω Test Fixture
26
25
-25°C
24
+30°C (room)
23
+80°C
22
21
20
20
21
22
23
24
FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C