PHM21NQ15T View Datasheet(PDF) - Philips Electronics

Part Name

Description

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PHM21NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHM21NQ15T

TrenchMOS™ standard level FET

60

IS

(A)

VGS = 0 V

40

03al10

10

VGS

(V)

8

ID = 20 A

Tj = 25 °C

VDD = 30 V

6

03al12

75 V

120 V

4

20

150 °C

Tj = 25 °C

2

0

0

0.5

1

1.5

VSD (V)

0

0

10

20

30

40

QG (nC)

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 20 A; VDD = 30 V, 75 V, 120 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 10882

Preliminary data

Rev. 01 — 30 January 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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