MJE182 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
MJE182 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 80 V
·DC Current Gain—
: hFE = 30(Min) @ IC= 0.5 A
= 12(Min) @ IC= 1.5 A
·Complement to Type MJE172
APPLICATIONS
·Low power audio amplifier
·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak
6
A
IBB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
1
A
1.5
W
12.5
150
℃
-65~150
℃
isc Product Specification
MJE182
isc Website：www.iscsemi.cn
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