IRGIB10B60KD1 View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRGIB10B60KD1
International Rectifier
IRGIB10B60KD1 Datasheet PDF : 12 Pages
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IRGIB10B60KD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
1.50
VCE(on)
Collector-to-Emitter Voltage
—
—
VGE(th)
Gate Threshold Voltage
3.5
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
—
gfe
Forward Transconductance
—
—
ICES
Zero Gate Voltage Collector Current
—
—
VFM
Diode Forward Voltage Drop
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
0.99
1.70
2.05
2.06
4.5
-10
5.0
1.0
90
150
1.80
1.32
1.23
—
—
V VGE = 0V, IC = 500µA
— V/°C VGE = 0V, IC = 1mA (25°C-150°C)
2.10
IC = 10A, VGE = 15V, TJ = 25°C
2.35 V IC = 10A, VGE = 15V, TJ = 150°C
2.35
IC = 10A, VGE = 15V, TJ = 175°C
5.5 V VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
— S VCE = 50V, IC = 10A, PW = 80µs
150
VGE = 0V, VCE = 600V
250 µA VGE = 0V, VCE = 600V, TJ = 150°C
400
VGE = 0V, VCE = 600V, TJ = 175°C
2.40 V IF = 5.0A, VGE = 0V
1.74
IF = 5.0A, VGE = 0V, TJ = 150°C
1.62
IF = 5.0A, VGE = 0V, TJ = 175°C
±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
LE
Cies
Coes
Cres
RBSOA
SCSOA
ISC (PEAK)
Erec
trr
Irr
Qrr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
— 41 62
— 4.6 6.9
— 19 29
— 156 264
— 165 273
— 321 434
— 25 33
— 24 34
— 180 250
— 62 87
— 261 372
— 313 425
— 574 694
— 22 31
— 24 34
— 240 340
— 48 67
— 7.5 —
— 610 915
— 66 99
— 23 35
FULL SQUARE
10 — —
— 100 —
— 99 128
— 79 103
— 14 18
— 553 719
IC = 10A
nC VCC = 400V
VGE = 15V
IC = 10A, VCC = 400V
d µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Ls= 150nH, TJ = 25°C
IC = 10A, VCC = 400V
ns VGE = 15V, RG = 50Ω, L = 1.1mH
Ls= 150nH, TJ = 25°C
IC = 10A, VCC = 400V
d µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
IC = 8.0A, VCC = 400V
ns VGE = 15V, RG = 50Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
nH Measured 5 mm from package
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
µs TJ = 150°C, Vp = 600V, RG = 50Ω
VCC=360V,VGE = +15V to 0V
A
µJ TJ = 150°C
ns VCC = 400V, IF = 10A, L = 1.07mH
A VGE = 15V, RG = 50Ω
nC di/dt = 500A/µs
Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω.
2
Energy losses include "tail" and diode reverse recovery.
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