IPD12N03L View Datasheet(PDF) - Infineon Technologies
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IPD12N03L Datasheet PDF : 8 Pages
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IPD12N03L
IPU12N03L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 30 A, VDD = 25 V, RGS = 25 Ω
160
mJ
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36 IPD12N03L
V
120
100
80
60
40
20
0
25 45 65 85 105 125 145 °C 185
Tj
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 15 A pulsed
IPD12N03L
16
V
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
Tj
12
10
8
6
4
0.2 VDS max
0.5 VDS max
2
0.8 VDS max
0
0
10
20
30
40 nC 55
QGate
Page 7
2003-01-17
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