FSES0765RG View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FSES0765RG Datasheet PDF : 18 Pages
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FSES0765RG
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
SENSEFET SECTION
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-source on Resistance
Output Capacitance
RDS(ON)
Coss
UVLO SECTION
Vcc Start Threshold Voltage
VSTART
Vcc Stop Threshold Voltage (Normal operation) VSTOP
Vcc Stop Threshold Voltage (Burst operation) VBSTOP
OSCILLATOR SECTION
Initial Frequency
FOSC
Voltage Stability
FSTABLE
Maximum Duty Cycle
DMAX
Minimum Duty Cycle
DMIN
FEEDBACK SECTION
Feedback Source Current (Normal operation)
IFB
Feedback Source Current (Burst operation)
IBFB
Feedback Voltage Threshold to Stop Switching VOFF
Shutdown Feedback Voltage
VSD
Shutdown Delay Current
IDELAY
PROTECTION SECTION
Over Voltage Protection
Over Current Protection Threshold Voltage(1)
Thermal Shutdown Temp(2)
VOVP
VAOCP
TSD
Condition
VGS = 0V, ID = 250μA
VDS = Max, Rating, VGS
= 0V
VDS= 0.8*Max., Rating
VGS = 0V, TC = 85°C
VGS = 10V, ID = 2.3A
VGS = 0V, VDS = 25V,
f = 1MHz
VFB=5V
VFB=5V
VFB=0V
VFB=5
11V ≤ Vcc ≤ 18V
VFB=5
-
VFB = 0V, Vcc=15V
VFB = 0V, Vcc=8.7V
0V ≤ VFB ≤ 0.4V
VFB ≥ 6.9V
VFB = 4V
Vcc ≥ 17V
-
-
Min.
650
-
-
-
-
11
8.5
7
18
0
48
-
0.7
70
0.2
7
1.6
18
0.9
140
Typ. Max. Unit
- -V
- 250 μA
- 300 μA
1.4 1.6 Ω
100 130 pF
12 13 V
9 9.5 V
7.5 8 V
20 22 kHz
1 3%
55 62 %
0 -%
0.9 1.1 mA
100 130 uA
0.3 0.4 V
7.5 8 V
2 2.4 μA
19 20 V
1.0 1.1 V
- - °C
Note:
1. These parameters, although guaranteed in design, are tested only in EDS (wafer test) process.
2. These parameters, although guaranteed in design, are not tested in mass production.
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