BSM 100 GB 170 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
1100
W
900
Ptot
800
700
600
500
400
300
200
100
0
0
20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
170
A
140
I
C
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
tp = 1.8µs
IC
10 2
10 µs
10 1
100 µs
1 ms
10 0
10 ms
DC
10 -1
10 0
10 1
10 2
10 3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
Z
thJC
10 -1
10 -2
10 -3
10 -5
single pulse
10 -4
10 -3
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -1
tp
s 10 0
4
Oct-27-1997