BDY57 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
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BDY57 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY57 BDY58
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BDY57
BDY58
IC=0.1A ; IB=0
V(BR)CBO
Collector-emitter
breakdown voltage
BDY57
BDY58
IC=5mA ; IE=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A
VBEsat Base-emitter saturation voltage
IC=10A ;IB=1A
ICBO
Collector cut-off current
ICER
Collector cut-off current
VCB=100V; IE=0
VCE=80V; RBE=10Ω;TC=100℃
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=4V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=15V,f=10MHz
ton
Turn-on time
IC=15A ;IB=1.5A
MIN TYP. MAX UNIT
80
V
125
120
V
160
1.4
V
1.4
V
0.5
mA
10
mA
0.5
mA
20
60
15
10
MHz
1.0
μs
2
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