BDY58 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BDY58 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY57 BDY58
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For use in low frequency large
signal power amplifications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BDY57
BDY58
Open emitter
VCEO
Collector-emitter voltage
BDY57
BDY58
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PT
Total power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
120
160
80
125
10
25
6
175
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
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