BC847PN View Datasheet(PDF) - Siemens AG
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BC847PN Datasheet PDF : 6 Pages
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BC 847PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 45
-
-V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CBO 50
-
-
V(BR)CES 50
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
ICBO
ICBO
hFE
-
-
15 nA
-
-
5 µA
-
-
250
-
200 290 630
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
mV
-
90 300
-
200 650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
700
-
-
900
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580 660 750
-
-
820
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
May-12-1998
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