BB504M View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
BB504M Datasheet PDF : 10 Pages
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BB504M
Power Gain vs. Gate Resistance
40
35
30
25
20
VDS = 5 V
15 VG1 = 5 V
VG2S = 4 V
10 f = 900 MHz
10 20 50
100 200
500 1000
Gate Resistance RG (kΩ)
Drain Current vs. Gate Resistance
30
20
10
VDS = VG1=5 V
VG2S = 4 V
0
10 20
50 100 200 500 1000
Gate Resistance RG (kΩ)
Gain Reduction vs.
Gate2 acto Source Voltage
0
10
20
30
VDS = VG1 = 5 V
40 RG = 120 kΩ
f = 200 MHz
50
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
Noise Figure vs. Gate Resistance
4
VDS = 5V
VG1 = 5 V
3
VG2S = 4 V
f = 900 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance RG (kΩ)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 VDS = VG1= 5 V
RG = 120 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage VGS2 (V)
Gain Reduction vs.
Gate2 acto Source Voltage
0
10
20
30
VDS = VG1 = 5 V
40 RG = 120 kΩ
f = 900 MHz
50
4
3
2
1
0
Gate2 to Source Voltage VGS2 (V)
Rev.7.00 Aug 10, 2005 page 6 of 9
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