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BAV19 View Datasheet(PDF) - General Semiconductor

Part Name
Description
View to exact match
BAV19
GE
General Semiconductor GE
BAV19 Datasheet PDF : 4 Pages
1 2 3 4
BAV19 THRU BAV21
Small Signal Diodes
DO-35
max. .079 (2.0)
Cathode
Mark
FEATURES
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the SOD-123 case
with the type designation BAV19W - BAV21W,
the MiniMELF case with the type designation
BAV101 - BAV103, and the SOT-23 case with the
type designation BAS19 - BAS21.
max. .020 (0.52)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
BAV19
BAV20
BAV21
Forward DC Current at Tamb = 25 °C
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
Repetitive Peak Forward Current
at f 50 Hz, Θ = 180 °, Tamb = 25 °C
VR
120
V
VR
200
V
VR
250
V
IF
2501)
mA
I0
2001)
mA
IFRM
6251)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C
IFSM
1
A
Power Dissipation at Tamb = 25 °C
Ptot
5001)
mW
Junction Temperature
Tj
1751)
°C
Storage Temperature Range
TS
–65 to +1751)
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
4/98

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