BAV19WS View Datasheet(PDF) - Kwang Myoung I.S. CO.,LTD

Part Name

Description

View to exact match

BAV19WS

Silicon Epitaxial Planar Diode

Kwang Myoung I.S. CO.,LTD 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Forward Voltage

Symbol

VFM

Reverse Current BAV19WS IR

BAV20WS

BAV21WS

Capacitance between

CT

terminals

Reverse Recovery Time

trr

Min Max Unit

-

1.0

V

1.25

-

0.1

μA

0.1

0.1

-

5

pF

-

50

ns

Test Condition

IF=100mA

IF=200mA

VR=100V

VR=150V

VR=200V

VR=0,f=1.0MHz

IF=IR=30mA,

Irr=0.1×IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSDB018

Rev.A

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