1N914 View Datasheet(PDF) - General Semiconductor

Part Name

Description

View to exact match

1N914

SMALL SIGNAL DIODE

General Semiconductor 

1N914

SMALL SIGNAL DIODE

DO-35

max. ∅.079 (2.0)

Cathode

Mark

max. ∅.020 (0.52)

Dimensions in inches and (millimeters)

FEATURES

♦ Silicon Epitaxial Planar Diode

♦ For general purpose and switching.

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Peak Reverse Voltage

Maximum Average Rectified Current

Maximum Power Dissipation at Tamb = 25 °C

Maximum Junction Temperature

Maximum Forward Voltage Drop at IF = 10 mA

Maximum Reverse Current at VR = 20 V

VR = 75 V

Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V,

RL = 100 Ω, to Irr = 1 mA

Maximum Capacitance at VR=0, f=1.0 MHZ

SYMBOL

VRM

Io

Ptot

Tj

VF

IR

trr

Ctot

VALUE

UNIT

100

V

75

mA

500

mW

200

°C

1.0

V

25

nA

5.0

µA

4.0

ns

4.0

pF

11/09/98

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