DG408BP45 View Datasheet(PDF) - Dynex Semiconductor
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DG408BP45 Datasheet PDF : 19 Pages
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25
Conditions:
CS = 1.0µF,
IT = 1000A
20
DG408BP45
15
Tj = 125°C
10
Tj = 25°C
5
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
1.5
Tj = 125°C
1.0
Tj = 25°C
0.5
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.22 Gate fall time vs on-state current
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