1N4448W View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

View to exact match

1N4448W

Fast switching Diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Fast switching Diode

1N4448W

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Current

Capacitance between

terminals

Reverse Recovery Time

Symbol

V(BR)R

VF1

VF2

VF3

VF4

IR1

IR2

CT

trr

Min Max Unit

75

-

V

0.62 0.72 V

0.855

1.0

1.25

-

2.5

μA

25

nA

-

4.0

pF

-

4.0

ns

Test Condition

IR=1.0μA

IF=5mA

IF=10mA

IF=100mA

IF=150mA

VR=75V

VR=20V

VR=0,f=1.0MHz

IF=IR=10mA,

Irr=0.1×IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSDA003

Rev.A

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