DG406BP25 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DG406BP25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG406BP25

4000

3500

Conditions:

CS = 1.0µF,

IT = 1000A

3000

2500

Tj = 125˚C

2000

Tj = 25˚C

1500

10

20

30

40

50

60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.27 Turn-off gate charge vs rate of rise of reverse gate current

1000

VD = 1250V

Tj = 125˚C

500

VD = 1650V

0

0.1

1.0

10

100

1000

Gate cathode resistance RGK - (Ohms)

Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

16/19

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