DG406BP25 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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DG406BP25 Datasheet PDF : 19 Pages
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DG406BP25
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
1000
500
VDRM
0.75x VDRM
0.5x VDRM
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.15 Turn-off energy vs on-state current
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
IT = 1000A
1500
1000
500
VDRM
0.75x VDRM
0.5x VDRM
0
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 16 TURN OFF ENERGY RATE OF RISE OF
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
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